Abstract
In this work, indium zinc oxide (IZO) films have been deposited on a polyethylene terephthalate substrate coated with an SiO x film. Based on a comparative investigation of an IZO monolayer and an IZO/SiO x multilayer, it is shown that oxygen has a great effect on the electrical properties of the thin films. A mechanism is described to explain the influence of the introduced SiO x buffer layer. It is considered that an interfacial layer has come into being at the interface between the SiO x layer and IZO layer, and the properties of this layer have been evaluated. Moreover, the electrical properties of the IZO/SiO x multilayer have been successfully improved by controlling the oxygen content of the interfacial layer.
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