Abstract

Glasses with compositions (40 − x)PbO-- x ZnO--60(B 2O 3--SiO 2) ( x = 5, 10, 15, 20) have been prepared. Substitution of ZnO for PbO increased glass bandgap ( E g ) and crystallization ability greatly. Crystalline phases of bulk glasses after rapid thermal processing (RTP) were identified by X-ray diffraction (XRD). Transmission line model (TLM) was employed to measure the electrical performance of Ag electrodes screen printed on polycrystalline Si substrates using Ag thick-film pastes and by RTP. The conductivity ( σ) decreased while specific contact resistance ( ρ c ) was not monotonic varied with increasing ZnO content. The correlation between electrical performance and glass barrier formed on the Ag gridline and Si emitter interface has been investigated.

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