Abstract
Pt/Ti low resistance non-alloyed ohmic contacts to p-InP-based contact layers in photonic devices, which were formed by rapid thermal processing (RTP), were studied. E-gun evaporated Pt/Ti metallization deposited onto 1.5 •10<sup>19</sup> cm<sup> -3</sup> Zn doped In0.53Ga0.47As yielded the best electrical performance. These contacts were ohmic as deposited with a specific contact resistance value of 3.0•10-4Ωcm2. RTP at higher temperatures led to decrease of the specific contact resistance to 3.4 •10-8Ωcm2 (0.08Ωmm) as a result of heating at 450°C for 30 sec. This heat treatment caused only a limited interfacial reaction (about 20 nm thick) between the Ti and the InGaAs, resulted in a thermally stable contact and induced tensile stress of 5.6• 10<sup>9</sup> dyne •cm -2 at the metal layer but without degrading the adhesion. Heating at temperatures higher than 500°C resulted in an extensive interaction and degradation of the contact.
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