Abstract
The influence of hydrostatic pressure on the low-temperature electron conductivity in n-type GaAs δ-doped single quantum wells is studied. The effect of the pressure on the electron mobility is described via a relative quantity that is proportional to the ratio between the results for P ≠ 0 and P = 0. Calculation is performed using an analytical description taking explicitly into account the dependence upon P of the main input parameters; i.e. effective mass and dielectric constant. It is shown that the effect of hydrostatic pressure is to increase the low-temperature resistivity of the two-dimensional electron gas in the system.
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