Effect of the hydrostatic pressure on the electron mobility in delta-doped systems

Abstract

The influence of hydrostatic pressure on the electron states and low-temperature mobility in n-type GaAs δ-doped single quantum wells is studied. Values of hydrostatic pressure consider are below the so-called Γ-X crossover, keeping all attention in the electronic properties at the Brillouin zone center. The effect of the pressure on the electron mobility is described via a relative quantity that is proportional to the ratio between P ≠ 0 and zero pressure results. Calculation is performed using an analytical description of the potential energy function profile, based on the Thomas-Fermi approach, taking explicitly into account the dependence upon P of the main input parameters: effective masses and dielectric constant. The relative mobility increases for higher values of P. The cases of zero and finite -although small- temperature are studied, showing that the influence of T is mainly to lower the values of the relative mobility in the entire range of P considered. Numerical results are reported for a two-dimensional density of ionized impurities equals to 7.5 × 1012 cm-2.