Abstract
The evolution of RHEED (reflection high-energy electron diffraction) pattern upon deposition of Ge on the Si(001)−2×1 surface substantially depended on the growth temperature. Ge was deposited onto the Si(001)−2×1 surface at 300, 400, 500 and 600°C up to 40 ML (monolayers) by molecular beam epitaxy (MBE). The results indicated that the surface covered by a few ML Ge consists of many steps for low temperature (300, 400°C) deposition, while it is smooth for 600°C deposition. For the low temperature deposition, the islands with {105} facets began to appear at the first stage of the island formation, and changed to the {113} facets with increase in Ge thickness, while for 600°C deposition, the islands with {113} facets grew even at the first stage. For the deposition beyond 20 ML, the RHEED patterns showed the presence of islands with {113} facets for all deposition temperatures.
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