Abstract
The effect of the doping concentration and space of both p-grid and FLR on the electrical performances of 4H-SiC JBS diode has been investigated. A 4H-SiC JBS diode with the p-grid space of 3um, the FLR space of 3um, and the doping concentration of 5E18cm-3 showed the highest blocking voltage of 1500V.
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