Abstract
Silicon carbon nitride (SiCN) films were synthesized on Si wafer by microwave plasma chemical vapor deposition with CH 4, N 2 and additional Si column as sources. The effect of N 2 flow rate and substrate temperature on the morphology and bonding structure of the samples was examined. Field emission scanning electron microscopy shows that crystals with perfect facets can be achieved at modest N 2 flow rate. A higher substrate temperature facilitates crystallization and larger crystalline size. X-ray photo-emission spectroscopy suggests that the bonding structure and composition of the films can be manipulated through varying the flow rate N 2. The influence of introducing H 2 on the films was also studied.
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