Abstract
The regularities of the modification of I–V characteristics of MIS structures via forming built-in surface potentials induced during the fabrication of an atomically pure silicon crystal surface using microwave plasma micromachining in different chemically active gaseous media are investigated. The effect of surface potentials on the slope of the I–V characteristics of the MIS devices and the value of their asymmetry at the reversal of the gate polarity are established. The increase in the slope of the I–V characteristics is attributed to the weakening of the diffuse scattering of electrons during the formation of negatively charged surface trap states at the interface and an increase in their mobility in the space charge layer at the semiconductor surface.
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