Effect of the amido Ti precursors on the atomic layer deposition of TiN with NH3

Abstract

The effect of the amide Ti precursors, tetrakis dimethyl amido titanium (TDMAT), tetrakis ethylmethyl amido titanium (TEMAT), and tetrakis diethyl amido titanium (TDEAT) on the atomic layer deposition of TiN film with ammonia was studied. Surface decomposition mechanism of each precursor was studied with in-situ Fourier transform infrared spectroscopy. It was confirmed that ethyl ligand in the precursor was more stable than methyl and the surface decomposition temperature of TDMAT, TEMAT, and TDEAT was 175, 200, and 250 °C on the SiO2 surface, respectively. The resistivity of the film was decreased with the increase in the substrate temperature due to the film crystallization. The TiN film deposited with TDMAT gave the lowest resistivity even though the atomic layer deposition temperature window was lowest due to the largest amount of carbon incorporation. It was confirmed that carbon incorporation leads to TiC formation and suppressed the postdeposition oxygen uptake possibly due to the elimination of vacancy in the film.