Abstract
Si(111) surfaces quenched from 1100 \ifmmode^\circ\else\textdegree\fi{}C have been observed at around 470 \ifmmode^\circ\else\textdegree\fi{}C using high-temperature scanning tunneling microscopy. We closely investigated dynamic motion of Si adatoms in the metastable stacking fault (SF) half cells of 11\ifmmode\times\else\texttimes\fi{}11 and 13\ifmmode\times\else\texttimes\fi{}13 dimer adatom stacking fault (DAS) structures. On these SF half cells adatoms continually change their positions at high temperature of 470 \ifmmode^\circ\else\textdegree\fi{}C. Most of the interior adatoms escape from the SF half cells more easily than the corner or center adatoms. This indicates that the interior adatoms hardly contribute to the stabilization of n\ifmmode\times\else\texttimes\fi{}n DAS structures.
Published Version
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