Abstract
Emulation of biological signal processing, learning and memory functions is essential for the development of artificial learning circuitry. Here, we report on the fabrication of organic–inorganic hybrid perovskite based two-terminal rewritable memristor for neuromorphic operations. We investigated the temperature variations in the current-voltage (I–V) characteristics behavior of a two-terminal organic–inorganic perovskite – graphene oxide rewritable memristor in planar geometry. The resistance switching effect has been found to have a switching time of ∼40 ns and it is more pronounced at temperatures below 250 K, then ionic conductivity freezes and electron transport predominates. This effect is observed at both: positive and negative voltages and the hysteresis of the I-Vs decreases significantly at T < 250 K. The change in conductance at temperatures from 290 K down to 100 K is attributed to the transition from ion migration to electronic conduction under external electric field with possible influence of phase structural transition in perovskite film at T < 200 K.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
