Abstract
Water is one of the primary needs of all living things in daily life. However, the availability of clean water is currently starting to decrease along with the decline in the quality and quantity of water in the environment. Industrialization and rapid economic development have caused concern due to the habit of disposing of waste without proper management. Attempts to get clean water free from pollution are to utilize technology with photocatalytic properties that can reduce liquid pollutants with Infra-Red light. The purpose of this study was to determine the optimum conditions of the band gap to photocatalyst by temperature variation. Fe2O3, CuO, and MnO2 are doped semiconductor materials for the application of photocatalyst properties. The materials were milled using a High Energy Milling (HEM-3ED) to obtain nanoparticle sizes. The synthesis was carried out by sol-gel and spin-coating methods to make a thin film in enhancing photocatalytic activity in industrial applications. Characterization was conducted using ultraviolet-visible (Uv-Vis) spectrophotometry analysis. The results showed that temperature affects photocatalyst properties and the band gap value obtained at a temperature variation of 400°C is 1.36 eV which is the most optimum semiconductor band gap energy.
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