Abstract
Measurements of Hall coefficient (RH), dc conductivity and Hall mobility have been made on p-type polycrystalline indium antimonide in the temperature range ∼ 77–450K. The average size of the grains in the sample was ∼0. 15 μm. It is found that Hall coefficient in the low temperature range is determined by the carrier concentration in the crystallites and n-type conduction predominates over p-type conduction above room temperature. Conductivity and Hall mobility were found to be thermally activated above 120K while the conduction near liquid nitrogen temperature is predominated by the variable range hopping. The effect of grain boundaries is found to be removed above ∼ 370K. The experimental results were used to calculate the grain size, intrinsic carrier density, energy band gap of the sample and the concentration of trap states.
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