Abstract
The effect of sample temperature on GaSb nanocell fabrication using a focused ion beam was investigated. Two-dimensional nanocell lattices with a cell interval of 100 nm were fabricated on GaSb at 135 K and 293 K. It was shown that the lattice develops slowly at 135 K with increasing ion dose, and that it does so quickly at 293 K, being disturbed by newly created secondary voids. These results were discussed using the migration parameters of point defects deduced from the recovery data of electron-irradiated GaSb by [Thommen, Phys. Rev. 161, 769 (1967)].
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