Abstract
Highly-quality GaN films were deposited on diamond substrate using an electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition system (ECR-PEMOCVD) at the proper temperature. The source of gallium is Trimethyl gallium (TMGa) and N2, and the influence of temperature on the properties of GaN films was investigated systematically by X-ray diffraction analysis (XRD), atomic force microscopy (AFM), room temperature photoluminescence (PL), respectively. The dense and uniformed GaN films with highly c-axis preferred orientation were successfully achieved on free-standing diamond substrates under optimized deposition temperature of 400 °C.
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