Abstract
This work reports the effect of temperature on analog/RF and linearity metrics of pocket doped InSb/Si heterojunction SOI TFET using Silvaco TCAD. In the proposed structure, the conventional SiO2 is replaced with SiO2/HfO2 that suppresses the ambipolar behavior and the n+ pocket introduced towards drain mitigates the effect of field induced quantum confinement which helps to enhance the drain current. The result obtained through simulation shows a better ION/IOFF and average subthreshold swing of 1011 to 107 and 29.3 to 38.5 when temperature varies in the range of 300–400 K. Analog/RF and linearity distortion performance at 400 K have been analyzed in terms of total capacitance, transconductance (2.4 ms/μm), transconductance frequency product (18.62 GHz/V), cutoff frequency (∼600 GHz), gain bandwidth product (5.3THZ), transit time (0.263 ps) and 1dB compression point (-6.6 dB). Reliability analysis shows a significant change in second harmonics with temperature which is unfavorable for subthreshold swing, ambipolar current, and ION/IOFF ratio.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
