Effect of temperature on advanced Si-based substrates performance for RF passive integration

Abstract

This paper analyses RF substrate losses and non-linearity on Si-based substrates. Through measurements it is shown that trap-rich high resistivity silicon and porous silicon substrates are virtually lossless up to 120°C. Although, RF losses and CPW attenuation increases with temperature on both Si-based solutions, they remain acceptable for high temperature RF applications. Porous locally grown silicon shows better linearity than a comparable trap-rich high-resistivity (HR) Si substrate up to 175°C. Both Si-based solutions are considered as promising substrates for RF integration and system-on-chip applications.