Abstract
The effect of Ta2O5 doping on electrical characteristics of SrTiO3 (STO) metal–insulator–metal (MIM) capacitors was studied for the first time. Using Ta2O5-doped STO dielectrics, an absolute quadratic voltage coefficient of capacitance (VCC-α) of 510 ppm/V2 and a high capacitance density of ∼20 fF/µm2 are achieved. These are approximately one order of magnitude lower than those of the MIM capacitor fabricated using a pure STO. In addition, the degradation of electrical properties (capacitance variation versus voltage, VCC-α, and long-term reliability) after electrical stressing is reduced, compared with that of an MIM capacitor fabricated using a pure STO.
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