Abstract
Effect of Ta and Cu seed layers, as well as Ta and Cu cap layers on the effective magnetic thickness of ultrathin permalloy (Ni81Fe19) were experimentally investigated for magnetic random access memory applications. The films were deposited by magnetron sputtering. For a Ta/Ni81Fe19/Ta fundamental structure, Ta seed and Ta cap layers resulted in a loss of moment equivalent to a magnetically dead layer of thickness 1.6±0.2 nm. X-ray photoelectron spectroscopy shows that a chemical reaction takes place at the Ta/Ni81Fe19 and Ni81Fe19/Ta interfaces, i.e. 2Ta + Ni = NiTa2, which is thermodynamically favourable. For the Cu/Ni81Fe19/Cu film, permalloy layers have hardly lost magnetic moment due to a lack of interface reactions in the Cu/Ni81Fe19 interface and Ni81Fe19/Cu interface.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
