Abstract

This study fabricates Al-Y codoped ZnO (AZOY)/n-Si heterojunction (HJ) solar cells using direct current magnetron sputtering and investigates the effect of etching time (from 30 to 120 s) on photovoltaic cell properties. To explore the effects of etching time on the optoelectrical properties of AZOY thin films, the films are deposited on glass substrate and then measured using a field-emission scanning electron microscope, atomic force microscopy, Hall effect measurement, and an ultraviolet-visible spectrometer. The results show that the resistivity, surface root mean square roughness, plasma resonance wavelength (λ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">p</sub> ), and haze value of films increase with an increase in etching time. The highest conversion efficiency (η:8.10±0.11%) of a cell is achieved with postdeposition etching for 60 s because of the higher AZOY thin film λ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">p</sub> and haze values. The higher short circuit current density (J <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">sc</sub> ) and open circuit voltage (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">oc</sub> ) are proved again; low-cost and high-quality AZOY transparent conducting film is a good window layer for transparent conducting oxide/n-Si HJ solar cells.

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