Abstract
The effects of surface stoichiometry on Be doping in GaAs grown by molecular layer epitaxy have experimentally been investigated. Be-doped p +-GaAs layers were grown on (0 0 1)-oriented GaAs substrates by intermittent supply of AsH 3 and triethylgallium (TEG) in an ultra-high vacuum. Be(MeCp) 2 was used as a p-type dopant gas. The surface stoichiometry before introducing the dopant gas was controlled by changing the AsH 3 and TEG injection sequence and supply time. The doping characteristics were evaluated by secondary ion mass spectroscopy analysis. It was found that doping characteristics of Be-doped GaAs are strongly dependent on the doping sequence and surface stoichiometry. This experimental result and the Be doping mechanism are discussed on the basis of rate law of the surface chemical reaction.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
