Abstract
We investigated the effect of surface roughness on the electrical characteristics in amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) fabricating high-κ Sm2O3 gate dielectrics, prepared under different annealing temperatures. The high-κ Sm2O3 a-IGZO TFT device annealed at 200°C exhibited better electrical characteristics, including a large field effect mobility of 6.25cm2/Vs, small threshold voltage of 0.79V, low subthreshold swing of 354mV/decade, and high Ion/Ioff ratio of 3.1×107. These results are attributed to the formation of smooth surface at the oxide/channel interface. Furthermore, the reliability of a Sm2O3 a-IGZO TFT device can be improved by oxygen annealing at low temperature.
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