Abstract

This paper presents the investigation of Surface Phonon Polariton (SPP), Interface Phonon Polariton (IPP), and resonant absorption at 1118−1129 cm−1 using Infra-Red Attenuated Total Reflection (IR-ATR) technique on an unimplanted and oxygen ion-implanted GaN layers on sapphire substrate using fluences 5 × 1014/cm2 and 5 × 1015/cm2 with (∼120 keV) energy. A strong absorption dip due to SPP mode at 689.2 cm-1 for the GaN layer and IPP mode at 773 cm−1 for GaN and sapphire substrate interface and resonant absorption mode at 1129 cm−1 are observed experimentally. As implanted dose increases SPP mode and resonant absorption mode are red-shifted, while IPP mode remains unchanged. The SPP mode is red-shifted around 3.3 cm−1 and 5 cm−1 in the implanted samples due to lattice damage and oxygen incorporation in the GaN layer. In this article SPP absorption mode broadening (10 cm−1 to 29 cm−1), peak shift, and other parameters (IPP, damping terms, resonance absorption dip frequency) for unimplanted and implanted GaN samples have been investigated and reported. The surface phonon dispersion and reflectivity equations are used to simulate experimental results for IR-ATR reflectance curve SPP, IPP mode, and resonance absorption for GaN samples are found to be in good agreement.

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