Abstract
We report on the effect of substrate misorientation on the Ga x -In 1− x As y P 1− y growth in metalorganic molecular beam epitaxy (MOMBE). It was found that surface steps into 〈01 1 〉 direction play an important role in the Ga and P incorporation mechanism, particularly for materials composition with 0.1 < x <0.4. From the presented data it can be concluded that the desorption processes during GaInAsP growth cannot be explained only by the diethylgallium desorption as observed during the GaAs growth. An additional phosphorus-gallium molecule interaction is affecting the element incorporation process. The results explain the earlier finding that substrate surfaces having steps into 〈01 1 〉 direction enhance the repeatability and large area uniformity in the GaInAsP growth using MOMBE.
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