Abstract
We report the results of an effort to understand the effect of surface electronic structure of indium tin oxide (ITO) on luminance efficiency of organic light-emitting devices (OLED)s. Nitric oxide (NO) plasma was used to modify the ITO. NO plasma induced an increase in the sheet resistance of ITO. The surface electronic structure of ITO was studied using X-ray photoelectron spectroscopy. An approximately 4-nm thick low conductivity layer with a production of N-O type species was formed near the ITO surface region. It is demonstrated that the barrier for hole-injection from an ITO anode to a hole transporting layer can be engineered by NO plasma treatment. The increase in luminance efficiency of the OLEDs reflects an improved current balance in the device.
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