Abstract
The effect of various chemical treatments of the alloy surface on the properties of Ti-p-SiGe and Ni-p-SiGe contacts fabricated by vacuum thermal deposition at a substrate temperature of 350–400°C has been studied. Etching under various conditions is used to form an initial surface with various surface-state densities. It is shown that an intermediate nickel germanosilicide layer is formed in nickel-based structures during thermal deposition of contacts, which has a significant effect on the current-voltage and capacitance-voltage characteristics of structures.
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