Abstract

The mist chemical vapor deposition method was used to synthesize pure anatase phase titanium dioxide thin films on quartz glass, glass, gallium oxide doped zinc oxide film and p-type silicon wafer substrates. The effects of substrates on the structural and optical properties of titanium dioxide thin films were investigated. Titanium dioxide films deposited on all substrates were anatase phase and showed the same dominant (101) growth orientation. The crystallinity of titanium dioxide films grown on different substrates increased in an order of glass, quartz glass, p-type silicon and gallium oxide doped zinc oxide. The titanium dioxide thin film deposited on p-type silicon showed the highest percentage of exposed {001} facets. The morphological results showed that the titanium dioxide films with good uniformity were obtained on all of the substrates. The surface area of titanium dioxide films deposited on p-type silicon substrate was larger than that of titanium dioxide films deposited on quartz glass, glass and gallium oxide doped zinc oxide substrates. The transmittance of obtained titanium dioxide films on transparent substrates was greater than 75% in visible region. The obtained pure anatase phase titanium dioxide thin film on p-type silicon is expected to be applicable to thin film gas sensors.

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