Abstract
Background: Lead Zirconate Titanate (PZT) films were synthesized by sol gel technique. The growth of films on ITO, Si\SiO2\Ti\Au, Si\Au and Si\SiO2\Ti\Al substrates discussed. In this study, Zirconium nitrate, lead acetate, and Ti (IV) isoproxide used as raw materials. Besides, acetic acid used as a solvent and 2-methoxy ethanol used as a stabilizer for Ti structure. Along with this, PZT films have perovskite structure, thin-film perovskite structure with high dielectric properties and hysteresis loop have been investigated. Methods: The effects of the type’s substrate on dielectric properties the ferroelectric properties were investigated and compared PZT film which deposited in different substrates. The films annealed at 600°C to complete crystalline films. XRD shows tetragonal PZT films have a strong perovskite structure with [100] prefer plane orientation. SEM and cross-section technique used to study for PZT surface films. Results: The dielectric constant at room temperature was different values depending on the types of substrate. The dielectric properties of the PZT films measured at 1 kHz were 120-400 dielectric constant and dielectric loss 0.02-0.08 at room temperature and 1 kHz. Conclusion: The largest remnant polarization (Pr) and coercive field (Ec) are obtained for PZT film deposited on Si\SiO2\Ti\Au substrate, equal to 26.6 mC/cm2 and 38.3 kV/cm, as compared to 16.3 mC/cm2 and 32.2 kV/cm2 for PZT film deposited on ITO substrate.
Published Version
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