Effect of Substrate Temperature on the Preparation of Cu<sub>2</sub>ZnSnSe<sub>4 </sub> Thin Films

Abstract

The Cu2ZnSnSe4 (CZTSe) thin films were prepared by co-electroplating Cu-Zn-Sn precursors followed by selenization at different substrate temperatures. The effect of substrate temperatures on the morphologies and structures of CZTSe films were characterized using scanning electron microscopy (SEM), energy dispersive spectrometer (EDS), X-ray diffraction (XRD) and Raman scattering spectrum respectively. The results revealed that the impurity phases in CZTSe thin films such as CuSe and SnSe disappeared when the substrate temperatures were increased. The surface morphologies of CZTSe thin films were also strongly dependent on the substrate temperature treatment in the selenization process though the selenium temperature was kept at 340°C.