Abstract
Tin Sulphide (SnS) thin films were deposited on glass substrate through chemical spray pyrolysis (CSP). Precursor solution was prepared by mixing stannous chloride and thiourea in the ratio 1:4. Influence of substrate temperature was studied. Pure SnS phase was obtained for an optimised deposition temperature of 280 °C. Substrate above and below 280 °C resulted in the formation of other phases such as SnS2, Sn2S3. Structural, electrical and optical properties of the films were determined using X-ray diffraction (XRD), Field emission scanning electron microscopy (FESEM) and UV–VIS-NIR spectrophotometer. The XRD pattern of the film at the optimized condition exhibited polycrystalline orthorhombic structure of SnS with preferential orientation along (1 1 1) plane. The prepared thin films have optical absorption coefficient >104 cm−1in the wavelength rage of 400–800 nm. Phase purity was determined by Raman analysis, which confirmed the formation of single phase SnS film. In this study we could optimise deposition temperature to get SnS with single phase, avoiding unwanted phases like Sn2S3, SnS2 and Sn3S4.
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