Abstract
Homogeneous Cu2MnSnS4 (CMTS) thin films have been deposited onto glass substrates via the chemical spray pyrolysis approach. The influence of substrate temperature on growth and properties of the as-prepared CMTS thin films has been carefully studied by the X-ray diffraction, scanning electron microscopy, UV–Vis-NIR absorption spectroscopy, and Hall effect measurement. As a result, the substrate temperature of 360 °C becomes most suitable for depositing the high-quality CMTS thin films, which exhibit the typical band gap of 1.19 eV, carrier concentration of 9.58 × 1020 cm−3, carrier mobility of 4.26 cm2 (V s)−1, and electrical resistivity of 1.89 × 10−3 Ω cm. Thus, the present CMTS films have a great potential to become the promising candidate of photovoltaic absorber materials.
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