Abstract
Two-dimensional (2D) metallic transition metal dichalcogenides (TMDs) have emerged as a promising class of materials for engineering novel electronic phases, 2D magnetism, superconductivity, and unique electronic applications. Vanadium dichalcogenides, in particular, exhibit a wide range of unusual physical and chemical properties, making them suitable for novel applications in condensed matter physics, materials science, and device physics. Here, we investigate the effect of substrate temperature on the morphology of 2D vanadium diselenide (VSe2) nanosheets synthesized by the atmospheric pressure chemical vapor deposition (APCVD) method. The growth is carried out on SiO2/Si, fluorphlogopite mica [KMg3(AlSi3O10)F2], and h-BN/SiO2/Si substrates. Our findings reveal that continuous thick VSe2 films are obtained at a substrate temperature of 650 °C, while large-sized VSe2 nanosheets with lower thickness are formed at intermediate substrate temperatures of 550–500 °C. This study provides insights into the substrate temperature-controlled growth of 2D VSe2 nanosheets for various potential applications.
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