Abstract
Barium zirconate titanate (BaZr0.2Ti0.8O3, BZT) 250nm thick thin films were fabricated by pulsed laser deposition and the influence of the substrate temperature on their preferred orientation, microstructure, morphology and dielectric properties was investigated. Dielectric measurements indicated the (1 1 0)-oriented BZT thin films deposited at 750°C to show good dielectric properties with high dielectric constant (~500 at 100kHz), low loss tangent (<0.01 at 100kHz), and superior tunability (>70% at 400kV/cm), while the largest figure of merit was 78.8. The possible microstructural background responsible for the high dielectric constant and tenability is discussed. In addition, thin films deposited at 750°C with device quality factor of 8738 and dielectric nonlinearity coefficient of 1.66×10−10J/C4m5 were demonstrated.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
