Abstract
Indium tin oxide (ITO) thin films were prepared by electron beam evaporation at different substrate temperatures. The structural studies were carried out by X-ray diffraction. Optical properties of the films were studied in the ultraviolet-visible-near infrared (UV-Vis-NIR) region (200 to 2500 nm). Electrical studies were carried out at room temperature of ITO films. The results showed that with increase in substrate temperature, the optical transmittance gradually increased up to 93% in the visible region, the transmittance edge gradually shifted to short wavelength and the corresponding refractive index and thermal emissivity decreased. The structure of ITO films was polycrystalline and the crystallinity was improved with increasing substrate temperature. The electrical resistivity decreased and attained its minimum value of 5.2 × 10-4 W cm at 300°C. Key words: Thin films, electron beam; indium tin oxide (ITO), optical constants, electrical properties, structure properties.
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