Abstract
We have examined the control of the epitaxial orientation of Rh films with a thickness of 100 nm on (1120) sapphire by changing substrate temperature (Ts) under the low-deposition-rate condition (deposition rate: Rd=1.0 nm/min) using an ultrahigh-vacuum sputtering system, because the lattice mismatches between the two-dimensional superlattice cells of (111)Rh/(1120) sapphire and (001)Rh/(1120) sapphire systems are approximately the same. As a result, it was revealed that the epitaxial orientation of Rh film can be changed from a mixed state of the epitaxially grown (001) and (111)Rh planes to a single state of the epitaxially grown (001)Rh plane on (1120) sapphire by adjusting only Ts.
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