Abstract
Abstract The adhesion characteristics of Cu films grown on Si and TiN substrates by PECVD were studied. Cu(etac) 2 was used as metalorganic precursor. The adhesion strength of Cu films was measured by the peel test in accordance with ASTM B 571-91. The adhesion strength of Cu films before 450 °C treatment was 13–27 kg f /cm. The oxidation of substrates before deposition showed a negative effect on the adhesion of Cu films. The adhesion was substantially improved by thermal treatment at 450 °C. The adhesion improvement by 450 °C treatment was mainly attributed to the removal of tensile residual stress in Cu films.
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