Abstract
MgxZn1–xO thin films were deposited on fused quartz substrate by PLD method with Mg0.4Zn0.6O source target, and the effect of the substrate surface atom constitution and the migration characteristics of reactive atoms on crystal structure of the MgZnO thin films were studied. Under oxygen-deficient condition, MgxZn1–xO thin film deposited mainly along (200) orientation of cubic structure lattice at temperature below 350 °C because of the alternatively constituted substrate surface by Si and O atoms and the weak horizontal migration of reactive atoms, mix-constituted substrate surface(Si/O areas and O-rich areas) and the intense horizontal migration of reactive atoms introduced phase separation in MgxZn1–xO thin films deposited at higher temperature. Single cubic structure (200) Mg0.38Zn0.62O thin films was made at 300 °C with Zn composition over theoretical limit in bulk materials, the band gap of which reached 4.2 eV and the MgZnO thin film could detect 330 nm near-UV light. And the available UV range of...
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