Abstract
Nanometric amorphous SiC x precipitates selforganized in a periodic array are observed to form during high-dose carbon implantation in Si(1 1 1). The interaction of silicon selfinterstitials (Si I) emitted from these precipitates with extended defects formed in the near-surface layers is studied by RBS/channeling and cross-sectional TEM. It is shown that at an implantation temperature of 150 °C the dominant defect species in this zone depends on the wafer crystal orientation: (1 1 1) extrinsic stacking faults in Si(1 1 1), while it is point defect like in Si(1 0 0). Trapping of Si I in (1 1 1) stacking faults hinders thermal crystallization of SiC x precipitates at 900 °C.
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