Abstract
We report the effect of substrate on the domain structure and bulk photovoltaic property in BiFeO3 films. It was found that the BiFeO3 film can be epitaxial growth on the TbScO3 substrate with a 45° rotation domain. Piezoelectric force microscopy measurements demonstrated that, compared with LaAlO3 substrate, the TbScO3 substrate is benefit for the formation of periodic 71° ferroelectric domain wall in the BiFeO3 film. Illuminating by 1 sun AM 1.5 G, the BiFeO3 film on TbScO3 substrate exhibits an open-circuit voltage of 9.66 V which value is much higher that the band gap of BiFeO3. These results promote further understanding of the relationship between domain structure and bulk photovoltaic properties in BiFeO3 films.
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