Abstract
Amorphous Pb(Zr0.52Ti0.48)O3 (PZT) thin films were deposited on LNO/SiO2/Si and Pt/Ti/SiO2/Si substrates by a sol-gel method and then crystallized by microwave irradiation in the microwave magnetic field. The crystalline phases and microstructures as well as ferroelectric property of the PZT films were investigated, and the effect of substrate on crystallization of PZT thin films heated by microwave annealing was discussed. The PZT films on LNO/SiO2/Si substrate show a highly (100)-preferred orientation, and better ferroelectric property than those on Pt/Ti/SiO2/Si substrate. The results demonstrated that LNO/SiO2/Si substrate is advantage for annealing of PZT thin films by microwave irradiation in the microwave magnetic field.
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