Abstract
The extrinsic photoconductivity of n-type GaAs thin-film structures under backgating was studied. It is shown that the change of the spatial inhomogeneity of the substrate under illumination is responsible for a new mechanism of extrinsic photoconductivity under backgating. This mechanism occurs through an illumination-induced variation in the backgating threshold voltage and may result in a transition from positive to negative photoconductivity even if all deep levels in the substrate are electron traps. Experiments have shown that the onset of backgating and of negative differential conductivity coincide both in the dark and under illumination thus supporting the proposed mechanism.
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