Abstract
Far-infrared photoconductivity in high purity GaAs is used to study the shallow donor states in this material and to extend the long wavelength limit for extrinsic photoconductive detection. This chapter discusses information concerning the properties of shallow donor levels in GaAs obtained from these measurements as well as performance that is achieved with GaAs extrinsic photoconductive detectors. The chapter explains that n-type epitaxial GaAs of sufficient purity to study extrinsic far-infrared photoconductivity and to optimize detector performance is now available, and the physics of the photoconductive processes and the performance of the detectors are reasonably well understood. The chapter also describes that the performance of cooled far-infrared detectors is very dependent on the actual background radiation present and on particular operating conditions, it is difficult to make a meaningful comparison of the various detectors characterized under different or unknown conditions.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
