Effect of Substrate Bipolar Pulse Voltage on the Properties of Cu Films Using Magnetron Sputtering with Multipolar Magnetic Plasma Confinement Assisted by Inductively Coupled Plasma

Abstract

Effects of substrate bipolar pulse voltage (Vs), pulse frequency and duty ratio on the properties of Cu thin films using magnetron sputtering with multipolar magnetic plasma confinement assisted by inductively coupled plasma (MMPC-ICP) were demonstrated. Results from X-ray diffraction (XRD) show that the intensities of the Cu(111) and Cu(200) peaks depend strongly on the Vs. The intensity of the XRD peak for Cu(111) increased when the Vs was increased from 0 V to −120 V. It is shown that the Cu film deposited at Vs=−120 V has a maximum grain size of about 42.6 nm; this value is about 1.5 times higher than that at Vs=0 V.