Abstract
Zirconium oxide (ZrO2) thin films are deposited at roomtemperature by cathodic arc at substrate biases of 0 V, -60 V and-120 V, respectively. The crystal structure, composition, morphology,and deposition rate of the as-deposited thin films are systematicallyinvestigated by x-ray diffraction, x-ray photoelectron spectroscopy(XPS) as well as scanning electron microscopy. The results show thatthe crystal structure, morphology and deposition rate of the films allare dependant on substrate bias. With the increase of bias voltage from0 V to -120 V, the zirconium oxide thin film grown on silicon wafer firstexhibits monoclinic lattice and tetragonal lattice, further evolvesmonoclinic phase with the preferred orientation along the (-111) and(-222) directions at -60 V and finally along nearly one observedpreferred (002) direction under -120 V. In addition, the variations ofmorphology with bias voltage are correlated to changes of the filmstructure. The results of XPS demonstrate that Zr elements are almostoxidized completely in the films achieved under -120 V bias.
Published Version
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