Abstract
Abstract The subband structure of (100)Si inversion layers can be altered by either uniaxial stress or substrate bias due to deformation potential and quantizing surface field, respectively. The reduced splitting between E0 and E0 caused by compressive stress is shown to be exactly compensated by the additional surface field via substrate bias at high compressive stress. At low compressive stress (≲ 109 dyn cm−2) and low carrier concentration (
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