Abstract

In this paper we present the simulation study of the ZnO/CdS/CuIn(1-x)GaxSe2/CuIn0.7Ga0.3Se2 cell structure which is consisted of an alternative absorber layers CuIn(1-x)GaxSe2 and CuIn0.7Ga0.3Se2, and cadmium sulfide (CdS) as the n-type buffer layer with an intrinsic zinc oxide (ZnO) as the window layer. The one-dimensional Analysis of Microelectronic and Photonic Structure (AMPS-1D) simulator is used to analyze numerically the performances of our structure. We have simulated the device parameters like fill factor(FF), open-circuit voltage (Voc), short-circuit current density (Jsc) and efficiency (?) as a function of composition x. we found that the p-layer band gap and its thickness strongly influence the performances of proposed solar cell. The efficiency up value that we obtained is in order of 22.40%.

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