Abstract
We analyze the defect density change caused by B and Sb doping and the determination of configuration of doped N in silicon from the viewpoint of stress accompanied by doping. The former is phenomenologically analyzed by the size-effect model and the threshold point defect concentration change for void density change is estimated. The latter is analyzed using the valence force field model and the atomic strain energy is calculated. The role of strain energy and unpaired electron in determining the structure is discussed.
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