Abstract
Band alignment transition from type-I to type-II of InP/In 0.48 Ga 0.52 P quantum dots (QDs) is observed by modifying the geometrical factors of the dome-shaped QDs. Strain distribution in InP/In 0.48 Ga 0.52 P QD is calculated using a valence force field (VFF) model. With the strain Hamiltonian from the VFF model, electrical structures of the QDs are obtained using 8-band k•p model. The results from this theoretical study show that the band alignment of the InP/In 0.48 Ga 0.52 P QDs can be tailored from type-I to type-II by controlling the size of the QDs, and flat valence band can be achieved at certain values of height and width of the QDs. In addition, InP/In 0.48 Ga 0.52 QDs of various sizes with the same effective bandgap but different band alignment is observed.
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