Abstract
We have investigated the effect of uniaxial and biaxial strain on the binding energy of Ge 2p, Ge 3d core level and the top of the valence band edge using x-ray photoelectron spectroscopy. The strain was measured by using a Raman spectrometer. From these results, we succeeded in the observation of the effect of uniaxial and biaxial strain on the binding energy and the top of the valence band edge.
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