Effect of strain on the binding energy of Ge 2p and 3d core level

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We have investigated the effect of uniaxial and biaxial strain on the binding energy of Ge 2p, Ge 3d core level and the top of the valence band edge using x-ray photoelectron spectroscopy. The strain was measured by using a Raman spectrometer. From these results, we succeeded in the observation of the effect of uniaxial and biaxial strain on the binding energy and the top of the valence band edge.